Develop and optimize plasma processes (etch/CVD) to achieve critical film, etch rate, uniformity, selectivity, and profile performance targets
Generate process specifications and define operational windows for next-generation semiconductor reactors
Drive hardware and subsystem suppliers to evaluate and optimize process-critical components (e.g., showerheads, gas delivery, pressure control)
Develop new process regimes and chemistry strategies to expand reactor capabilities for advanced technology nodes
Design process experiments (DOE) to identify and mitigate defectivity, wafer damage, and plasma instability issues
Material and precursor selection to evaluate new gas chemistry combinations and material compatibility for advanced film application
Understand process metrology and diagnostic techniques (e.g., OES, mass spec) to characterize plasma properties and integrate end-point control
Support cost-of-ownership reduction programs through process optimization, gas consumption reduction, and process transfer to lower-cost hardware platforms.
Work closely with cross-functional teams including mechanical engineers, software engineers, and product Managers to define and implement initiatives.
The job incumbent should possess:
A Masters or PhD in Chemical Engineering, Material Science or a closely related field with at least 5 years of relevant industry or academic experience.
Strong oral and written communication abilities, with the capability to present complex ideas clearly and effectively.
Demonstrated experience in applying structured problem-solving tools and methodologies (e.g., Root Cause Analysis, Six Sigma, Fishbone Diagram, 5 Whys).
Familiar with semiconductor process and characterization tools (e.g. SEM, film thickness/stress measurement, plasma diagnostic tools, OES) will be a plus
Familiar with material properties, thin film characterization, and plasma chemistry dynamics
Hands-on skills in wafer handling, chamber maintenance, manual tool operation, and basic mechanical/gas-line assembly will be a plus